advanced power p-channel enhancement mode electronics corp. power mosfet capable of 1.8v gate drive bv dss -20v small package outline r ds(on) 80m surface mount device i d -2.9a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 125 /w data and specifications subject to change without notice -55 to 150 1 -55 to 150 parameter drain-source voltage gate-source voltage drain current 3 , v gs @ 4.5v thermal data parameter total power dissipation operating junction temperature range storage temperature range drain current 3 , v gs @ 4.5v -2.3 pulsed drain current 1 -10 201312161 1 ap2333en-hf rating - 20 + 8 -2.9 halogen-free product g d s d g s sot-23s ap2333 series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the sot-23s package is widely preferred for commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters.
ap2333en-hf electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-2a - 62 80 m v gs =-2.5v, i d =-1.5a - 78 100 m v gs =-1.8v, i d =-1a - 98 160 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.25 -0.5 -1 v g fs forward transconductance v ds =-5v, i d =-2a - 8.5 - s i dss drain-source leakage current v ds =-16v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 8v, v ds =0v - - + 30 ua q g total gate charge i d =-2a - 8 12.8 nc q gs gate-source charge v ds =-10v - 1 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 2 - nc t d(on) turn-on delay time v ds =-10v - 7 - ns t r rise time i d =-1a - 13 - ns t d(off) turn-off delay time r g =3.3 -23- ns t f fall time v gs =-5v - 5.5 - ns c iss input capacitance v gs =0v - 640 1024 pf c oss output capacitance v ds =-10v - 70 - pf c rss reverse transfer capacitance f=1.0mhz - 60 - pf r g gate resistance f=1.0mhz - 12 24 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.2a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-2a, v gs =0 v , - 14 - ns q rr reverse recovery charge di/dt=100a/s - 6 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 5s ; 350 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2
ap2333en-hf 65m fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature 2.01e+08 fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -2a v gs = -4.5v 0 2 4 6 8 10 12 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -5.0v -4.5v -3.5v -2.5v v g = -1.8v 0 2 4 6 8 10 12 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) -5.0v -4.5v -3.5v -2.5v v g = -1.8v t a = 150 o c 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 0.4 0.8 1.2 1.6 2 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d = -1ma 40 60 80 100 120 012345 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d = -1a t a =25 o c
ap2333en-hf 65m fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fi g 10. effective transient thermal im p edance fig 11. drain current v.s. ambient fig 12. gate charge waveform temperature 4 0 1 2 3 4 5 6 024681012 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -2a v ds = -10v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) 0.01 0.05 0.1 0.2 duty=0.5 single pulse p dm duty factor = t/t peak t j = p dm x r thja + t a t t rthja = 350 /w 0 200 400 600 800 1000 1 5 9 13172125 -v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 0.02 0 1 2 3 4 25 50 75 100 125 150 t a , ambient temperature ( o c ) -i d , drain current (a) operation in this area limited by r ds(on) q v g -4.5v q gs q gd q g charge
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